CTT60GK08 CTT60GK12 CTT60GK14 CTT60GK16 CTT60GK18可控硅模塊
CTD70GK08 CTD70GK12 CTD70GK14 CTD70GK16 CTD70GK18可控硅模塊
CTD130GK08 CTD130GK12 CTD130GK14 CTD130GK16 CTD130GK18可控硅
CTD116GK08 CTD116GK12 CTD116GK14 CTD116GK16 CTD116GK18可控硅
C3PDB70N08 C3PDB70N12 C3PDB70N14 C3PDB70N16 C3PDB70N18整流橋
C3PDB50N08 C3PDB50N12 C3PDB50N14 C3PDB50N16 C3PDB50N18整流橋
CTT130GK08 CTT130GK12 CTT130GK14 CTT130GK16 CTT130GK18可控硅
CTT116GK08 CTT116GK12 CTT116GK14 CTT116GK16 CTT116GK18可控硅
西班牙
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C3PDB80N08 C3PDB80N12 C3PDB80N14 C3PDB80N16 C3PDB80N18整流橋
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產(chǎn)品屬性
品牌 | 西班牙 | 型號 | C3PDB80N08 C3PDB80N12 C3PDB80N14 C3PDB80N16 C3PDB8 | 封裝 | C3PDB80N08,C3PDB80N12,C3PDB80N14,C3PDB80N16,C3PDB80N18 |
批號 | 19 | IGBT類型 | 1 | 配置類型 | 1 |
集射極擊穿電壓(VCEO) | 1 | 最大集電極電流(Icm) | 1 | 集電極截止電流 | 200 |
最大耗散功率 | 200(mW) | 工作溫度范圍 | 36 | 安裝類型 | 1 |
應(yīng)用領(lǐng)域 | 電工電氣 |
產(chǎn)品詳細(xì)說明
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